Document Number: 94507

www.vishay.com

Revision: 01-Mar-10

7

40MT120UHAPbF, 40MT120UHTAPbF

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

Vishay High Power Products

Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

0

200

400

600

800

1000

dIF /dt (A/μs)

10

15

20

25

30

35

40

45

50

0

200

400

600

800

1000

1200

dIF /dt (A/μs)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.0Ω

30Ω

10 Ω

50Ω

60A

40A

20A

0

20

40

60

80

100

VCE (V)

10

100

1000

10000

Cies

Coes

Cres

0

100

200

300

400

500

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

600V

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

1E-005

0.0001

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.01

0.02

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.123

1.1977

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

τ

τ

C

Ci= i/Ri

Ci= τi/Ri

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

1E-005

0.0001

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.01

0.02

0.05

SINGLE PULSE

( THERMAL RESPONSE)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W)

τi (sec)

0.043

0.001214

0.105

0.044929

0.123

1.1977

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

τ

τ

C

Ci= i/Ri

Ci=

τi/Ri