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20ETS08PBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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20ETS08PBF Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  VS-20ETS..PbF, VS-20ATS..PbF www.vishay.com Vishay Semiconductors Revision: 18-Aug-11 2 Document Number: 94341 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 20 A Maximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 316 A2s 10 ms sine pulse, no voltage reapplied 442 Maximum I2 t for fusing I2 t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2 s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop VFM 20 A, TJ = 25 °C 1.1 V Forward slope resistance rt TJ = 150 °C 10.4 m Threshold voltage VF(TO) 0.85 V Maximum reverse leakage current IRM TJ = 25 °C VR = Rated VRRM 0.1 mA TJ = 150 °C 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation 1.3 °C/W Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.5 Approximate weight 2 g 0.07 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in) maximum 12 (10) Marking device Case style TO-220AC 20ETS08 20ETS12 Case style TO-220AB 20ATS08 20ATS12 |
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