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2N5839 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5839 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5838 2N5839 2N5840 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5838 250 2N5839 275 VCEO(SUS) Collector-emitter sustaining voltage 2N5840 IC=0.1A ;IB=0 350 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 1.0 mA ICEV Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA 2N5838 IC=3A ; VCE=3V 8 40 hFE DC current gain 2N5839/5840 IC=2A ; VCE=3V 10 50 fT Transition frequency IC=1A ; VCE=10V;f=1.0MHz 5 MHz |
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