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2N5759 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5759 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5758 2N5759 2N5760 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5758 100 2N5759 120 VCEO(SUS) Collector-emitter sustaining voltage 2N5760 IC=0.2A ;IB=0 140 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=6A ;IB=1.2A 2.0 V VBE Base-emitter on voltage IC=3A ; VCE=2V 1.5 V 2N5758 VCE=50V; IB=0 2N5759 VCE=60V; IB=0 ICEO Collector cut-off current 2N5760 VCE=70V; IB=0 1.0 mA ICEX Collector cut-off current VCE=ratedVCB; VBE(off)=1.5V TC=150℃ 1.0 5.0 mA ICBO Collector cut-off current VCE=ratedVCB; IB=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA 2N5758 25 100 2N5759 20 80 hFE-1 DC current gain 2N5760 IC=3A ; VCE=2V 15 60 hFE-2 DC current gain IC=6A ; VCE=2V 5.0 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 300 pF fT Transition frequency IC=0.5A ; VCE=20V 1.0 MHz |
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