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1N5062 Datasheet(PDF) 2 Page - Vishay Siliconix |
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1N5062 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page 1N5059, 1N5060, 1N5061,1N5062 Standard Avalanche Sinterglass Diode Vishay Semiconductors Document Number: 86000 For technical questions within your region, please contact one of the following: www.vishay.com Rev. 1.6, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 139 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 4 - Max. Forward Current vs. Forward Voltage ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT Forward voltage IF = 1 A VF -- 1 V IF = 2.5 A VF - - 1.15 V Reverse current VR = VRRM IR -- 1 μA VR = VRRM, Tj = 100 °C IR - - 10 μA VR = VRRM, Tj = 150 °C IR - - 100 μA Breakdown voltage IR = 100 μA 1N5059 V(BR)R 225 - 1600 V 1N5060 V(BR)R 450 - 1600 V 1N5061 V(BR)R 650 - 1600 V 1N5062 V(BR)R 900 - 1600 V Diode capacitance VR = 0 V, f = 1 MHz CD -40 - pF Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr -- 4 μs 0 40 80 120 160 200 25 50 75 100 125 150 175 Tj - Junction Temperature ( °C) 15764 VR =VRRM 160 K/W 100 K/W 45 K/W RthJA = 1N5062 1N5061 1N5060 1N5059 0.1 1 10 100 1000 15765 VR =VRRM 25 50 75 100 125 150 175 Tj - Junction Temperature ( °C) 15763_1 VR =VRRM half sinewave RthJA=45 K/W l =10 mm RthJA= 100 K/W PCB:d=25mm 020406080 100 120 140 160 180 Tamb - Ambient Temperature (°C) 0.0 1.0 1.5 2.0 2.5 3.0 0.5 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 VF - Forward Voltage(V) 15762 Tj =25 °C Tj =175 °C 0.01 0.1 1 10 100 0.001 |
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