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100NTD Datasheet(PDF) 1 Page - Naina Semiconductor ltd.

Part No. 100NTD
Description  Thyristor - Diode Module
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Maker  NAINA [Naina Semiconductor ltd.]
Homepage  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

100NTD Datasheet(HTML) 1 Page - Naina Semiconductor ltd.

  100NTD Datasheet HTML 1Page - Naina Semiconductor ltd. 100NTD Datasheet HTML 2Page - Naina Semiconductor ltd.  
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Naina Semiconductor
1
D-95, Sector 63, Noida
sales@nainasemi.com
Thyristor
Features
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
Available in both M1 & M2 package
Thermal & Mechanical Specifications (T
Parameter
Operating junction temperature range
Thermal resistance, junction to case
Electrical Characteristics (TA = 25
0C unless otherwise
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Maximum Ratings (TA = 25
0C unless otherwise noted)
Parameter
Maximum average forward current @ TJ =
85
0C
Maximum average RMS forward current
Maximum non-repetitive surge current @ t
= 10ms
Maximum I
2t for fusing @ t = 10ms
emiconductor Ltd.
100
Sector 63, Noida – 201301, India
Tel: 0120-4205450
Fax: 0120
sales@nainasemi.com
www.nainasemi.com
Thyristor – Diode Module
Improved glass passivation for high reliability
(TA = 25
0C unless otherwise noted)
Symbol
TJ
-65 to +1
Rth(JC)
C unless otherwise noted)
Symbol
IT(max)
range
VRRM
200 to 1600
VFM
IGT
VGT
IH
IL
dv/dt
VISO
C unless otherwise noted)
Symbol
Values
Units
IF(AV)
100
A
IF(RMS)
220
A
IFSM
2000
A
I
2t
20
kA
2s
M1 & M2 PACKAGE
100NTD
4205450
Fax: 0120-4273653
Values
Units
65 to +125
0C
1.1
0C/W
Values
Units
100
A
200 to 1600
V
1.55
V
100
A
2
V
5 to 100
mA
400
mA
300
V/µs
2500
V
M1 & M2 PACKAGE


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