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TFP740 Datasheet(PDF) 1 Page - Tak Cheong Electronics (Holdings) Co.,Ltd |
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TFP740 Datasheet(HTML) 1 Page - Tak Cheong Electronics (Holdings) Co.,Ltd |
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1 / 7 page  Number: DB-190 March 2010, Revision B Page 1 TAK CHEONG ® SEMICONDUCTOR N-Channel Power MOSFET 10A, 400V, 0.55Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. Features ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a discrete fast recovery diode. 1 = Gate 2 = Drain 3 = Source DEVICE MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (T C =25°C, unless otherwise noted ) Symbol Parameter Value Units VDSS Drain- Source Voltage 400 V VGSS Gate-Source Voltage ± 30 V ID Drain Current 10 A IDM Drain Current Pulsed 40 A Power Dissipation (Note 2) 125 W PD Derating factor above 25℃ 1.0 W/℃ EAS Single Pulsed Avalanche Energy (Note 1) 680 mJ EAR Repetitive Avalanche Energy (Note 2) 12.5 mJ TJ Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range - 55 to +150 ℃ Notes: 1. L=18.5mH, IAS=10A, VDD=50V, RG=50Ω, Starting TJ=25℃ 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RθJC Thermal Resistance, Junction-to-Case 1 ℃ /W RθJA Thermal Resistance, Junction-to-Ambient 62 ℃ /W 1 2 3 TO-220AB G D S L xxyy TFP XXXX L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type |
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