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HMC817LP4E Datasheet(PDF) 1 Page - Hittite Microwave Corporation

Part No. HMC817LP4E
Description  SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
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HMC817LP4E Datasheet(HTML) 1 Page - Hittite Microwave Corporation

   
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7
7 - 1
HMC817LP4E
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
v00.1108
General Description
Features
Functional Diagram
Typical Applications
The HmC817lp4e is a GaAs pHemT Dual Chan-
nel low Noise Amplifier that is ideal for Cellular/3G
and lTe/wimAX/4G basestation front-end receivers
operating between 550 and 1200 mHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HmC817lp4e shares
the same package and pinout with the HmC816lp4e
and HmC818lp4e lNAs. The HmC817lp4e can be
biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the lNA for each application.
Noise figure: 0.5 dB
Gain: 16 dB
output ip3: +37 dBm
single supply: +3V to +5V
50 ohm matched input/output
24 lead 4x4mm QfN package: 16 mm2
The HmC817lp4e is ideal for:
• Cellular/3G and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• multi-Channel Applications
• Access points
parameter
Vdd = +3 V
Vdd = +5 V
Units
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
frequency range
698 - 960
550 - 1200
698 - 960
550 - 1200
mHz
Gain
13
16
11
15
13.5
16
11.5
16
dB
Gain Variation over Temperature
0.003
0.003
0.005
0.005
dB/ °C
Noise figure
0.5
0.8
0.5
1.1
0.55
0.85
0.6
1.1
dB
input return loss
28
22
22
17
dB
output return loss
12
14
12
15
dB
output power for 1 dB
Compression (p1dB)
14
16
12.5
16.5
18.5
20.5
16.5
21
dBm
saturated output power (psat)
17
17.5
21
21.5
dBm
output Third order intercept (ip3)
31
30
37
37
dBm
supply Current (idd)
24
34
44
24
34
44
65
95
124
65
95
124
mA
* rbias resistor sets current, see application circuit herein
Electrical Specifications, TA = +25° C,
Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2


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