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BCP020T Datasheet(PDF) 1 Page - BeRex Corporation

Part No. BCP020T
Description  HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
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Maker  BEREX [BeRex Corporation]
Homepage  http://www.berex.com
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BCP020T Datasheet(HTML) 1 Page - BeRex Corporation

   
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www.berex.com
BeRex, Inc. 1735 North 1
st Street #302 San Jose, CA 95112 tel. (408) 452-5595
September 2011
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm)
The BeRex BCP020T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 200 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP020T is produced using state of the art metallization with SI3N4 passivation and is screened to
assure reliability.
PRODUCT FEATURES
24 dBm Typical Output Power
14 dB Typical Gain @ 12 GHz
0.25 X 200 Micron Recessed Gate
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
TEST
FREQ.
MIN.
TYPICAL
MAX.
UNIT
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50%
Idss)
12 GHz
18 GHz
22.5
24.0
24.0
dBm
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
12 GHz
18 GHz
12.0
14.0
12.0
dB
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
12 GHz
18 GHz
60
55
%
NF
50 Ohm Noise Figure (Vds=2V, Ids=10 mA
12 GHz
1.09
dB
Idss
Saturated Drain Current (Vgs = 0V, Vds = 3V)
40
60
80
mA
Gm
Transconductance (Vds = 3V, Vgs = 50% Idss)
80.0
mS
Vp
Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V)
-2.5
-1.1
-0.5
V
BVgd
Drain Breakdown Voltage (Ig = 0.6 mA, source open)
-15
-12
V
BVgs
Source Breakdown Voltage (Ig = 0.6 mA, drain open)
-13
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
160
° C/W
BCP020T


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