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HMC508LP5E Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC508LP5E Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 6 page For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 8 8 - 1 HMC508LP5 / 508LP5E MMIC VCO w/ HALF FREQUENCY OUTPUT 7.3 - 8.2 GHz v04.0811 General Description Features Functional Diagram The HMC508LP5 & HMC508LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC508LP5 & HMC508LP5E integrate resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temper- ature, shock, and process due to the oscillator’s monolithic structure. Power output is +15 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components. Dual Output: Fo = 7.3 - 8.2 GHz Fo/2 = 3.65 - 4.1 GHz Pout: +15.0 dBm Phase Noise: -116 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² Typical Applications Low noise MMIC VCO w/Half Frequency, for: • VSAT Radio • Point to Point/Multi-Point Radio • Test Equipment & Industrial Controls • Military End-Use Electrical Specifications, T A = +25° C, Vcc = +5V Parameter Min. Typ. Max. Units Frequency Range Fo Fo/2 7.3 - 8.2 3.65 - 4.1 GHz GHz Power Output RFOUT RFOUT/2 +12 +4 +17 +10 dBm dBm SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT -116 dBc/Hz Tune Voltage Vtune 2 13 V Supply Current (Icc) (Vcc = +5.0V) 200 240 280 mA Tune Port Leakage Current (Vtune= 13V) 10 µA Output Return Loss 2 dB Harmonics/Subharmonics 1/2 2nd 3rd 40 20 35 dBc dBc dBc Pulling (into a 2.0:1 VSWR) 8 MHz pp Pushing @ Vtune= 5V 10 MHz/V Frequency Drift Rate 1.0 MHz/°C |
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