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506LP4E Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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506LP4E Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 6 page 11 11 - 102 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com General Description Features Functional Diagram The HMC506LP4 & HMC506LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 7.8 to 8.7 GHz, the VCO’s phase noise performance is excellent over temperature, shock and vibration due to the oscillator’s monolithic struc- ture. Power output is +14 dBm typical from a single supply of +3.0V @ 77 mA. The voltage controlled oscillator is packaged in a leadless QFN 4 x 4 mm surface mount package. Pout: +14 dBm Phase Noise: -103 dBc/Hz @100 KHz No External Resonator Needed Single Supply: +3V @ 77 mA QFN Leadless SMT Package, 16 mm2 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • VSAT Radio • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • Military End-Use Electrical Specifications, T A = +25° C, Vcc = +3V Parameter Min. Typ. Max. Units Frequency Range 7.8 - 8.7 GHz Power Output 11.0 14.0 dBm SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -103 dBc/Hz Tune Voltage (Vtune) 1 11 V Supply Current (Icc) (Vcc = +3.0V) 77 mA Tune Port Leakage Current 10 μA Output Return Loss 7dB Harmonics 2nd 3rd -16 -28 dBc dBc Pulling (into a 2.0:1 VSWR) 28 MHz pp Pushing @ Vtune= +5V 78 MHz/V Frequency Drift Rate 0.85 MHz/°C MMIC VCO w/ BUFFER AMPLIFIER, 7.8 - 8.7 GHz v01.0805 HMC506LP4 / 506LP4E |
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