For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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HMC463LH250

GaAs pHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2 - 20 GHz

v04.1010

General Description

Features

Functional Diagram

The HMC463LH250 is a GaAs MMIC pHEMT Low

Noise AGC Distributed Amplifier packaged in a

hermetic surface mount package which operates

between 2 and 20 GHz. The amplifier provides 13

dB of gain, 3 dB noise figure and 18 dBm of output

power at 1 dB gain compression while requiring only

60 mA from a +5V supply. An optional gate bias

(Vgg2) is provided to allow Adjustable Gain Control

(AGC) of 8 dB typical. Gain flatness is excellent at

±0.5 dB from 2 - 14 GHz making the HMC463LH250

ideal for EW, ECM RADAR, test equipment and

High-Reliability

applications.

The

HMC463LH250

LNA I/Os are internally matched to 50 Ohms and are

internally DC blocked.

50 Ohm Matched Input/Output

Hermetic SMT Package

Gain: 14 dB

Noise Figure: 2.5 dB @ Mid-Band

P1dB Output Power: +18 dBm @ Mid-Band

Supply Voltage: +5V @ 60mA

Screening to MIL-PRF-38535 (Class B or S) Available

Typical Applications

The HMC463LH250 is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Test Instrumentation

• Fiber Optics

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

Frequency Range

2.0 - 6.0

6.0 - 16.0

16.0 - 20.0

GHz

Gain

11.5

14.5

9

12

8

11

dB

Gain Flatness

±0.25

±0.5

±0.9

dB

Gain Variation Over Temperature

0.010

0.010

0.010

dB/ °C

Noise Figure

3.5

5.5

2.5

4.5

4

5.5

dB

Input Return Loss

15

15

9

dB

Output Return Loss

11

15

7

dB

Output Power for 1 dB Compression (P1dB)

16

19

13

18

10

13

dBm

Saturated Output Power (Psat)

21.5

20.5

19

dBm

Output Third Order Intercept (IP3)

29

27

24

dBm

Supply Current

(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)

60

80

60

80

60

80

mA

* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.