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HMC457QS16G Datasheet(PDF) 8 Page - Hittite Microwave Corporation |
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HMC457QS16G Datasheet(HTML) 8 Page - Hittite Microwave Corporation |
8 / 10 page For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 11 - 247 Pin Number Function Description Interface Schematic 1 Vcc Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. 2, 4, 5, 7, 9, 16 GND Ground: Backside of package has exposed metal ground slug that must also be connected to RF/DC ground. Vias under the device are required. 3 Vbias Power Supply for Bias Circuit 6 RFIN This pin is AC coupled and matched to 50 Ohms 8 Vpd Power control pin. For maximum power, this pin should be connected to +5V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 10 - 15 RFOUT RF output and DC bias for the output stage. Pin Descriptions HMC457QS16G / 457QS16GE InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz v03.0907 |
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