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HMC358MS8G Datasheet(PDF) 1 Page - Hittite Microwave Corporation

Part No. HMC358MS8G
Description  MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz
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Manufacturer  HITTITE [Hittite Microwave Corporation]
Direct Link  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC358MS8G Datasheet(HTML) 1 Page - Hittite Microwave Corporation

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC358MS8G / 358MS8GE
MMIC VCO w/ BUFFER
AMPLIFIER, 5.8 - 6.8 GHz
v04.0607
General Description
Features
Functional Diagram
The HMC358MS8G & HMC358MS8GE are GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
VCOs. The HMC358MS8G & HMC358MS8GE inte-
grate resonators, negative resistance devices, varac-
tor diodes, and buffer amplifiers. The VCO’s phase
noise performance is excellent over temperature,
shock, and process due to the oscillator’s monolithic
structure. Power output is 11 dBm typical from a 3V
supply voltage. The voltage controlled oscillator is
packaged in a low cost, surface mount 8 lead MSOP
package with an exposed base for improved RF and
thermal performance.
Pout: +11 dBm
Phase Noise: -110 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 100 mA
15mm2 MSOP8G SMT Package
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier
for C-Band applications such as:
• UNII & Pt. to Pt. Radios
• 802.11a & HiperLAN WLAN
• VSAT Radios
Electrical Specifications, T
A = +25° C, Vcc = +3V
Parameter
Min.
Typ.
Max.
Units
Frequency Range
5.8 - 6.8
GHz
Power Output
811
dBm
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
-110
dBc/Hz
Tune Voltage (Vtune)
0
10
V
Supply Current (Icc)
100
mA
Tune Port Leakage Current (Vtune= 10V)
10
μA
Output Return Loss
9dB
Harmonics
2nd
3rd
-10
-20
dB
dB
Pulling (into a 2.0:1 VSWR)
10
MHz pp
Pushing @ Vtune= +3V
150
MHz/V
Frequency Drift Rate
0.8
MHz/°C


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