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HMC327MS8G Datasheet(PDF) 1 Page - Hittite Microwave Corporation

Part No. HMC327MS8G
Description  GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
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HMC327MS8G Datasheet(HTML) 1 Page - Hittite Microwave Corporation

   
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 2
HMC327MS8G / 327MS8GE
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
v06.1209
General Description
Features
Functional Diagram
The HMC327MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
power amplifier which operates between 3 and 4 GHz.
The amplifier is packaged in a low cost, surface mo-
unt 8 leaded package with an exposed base for
improved RF and thermal performance. With a mini-
mum of external components, the amplifier provides
21 dB of gain, +30 dBm of saturated power at 45%
PAE from a single +5V supply. Power down capability
is available to conserve current consumption when the
amplifier is not in use.
High Gain: 21 dB
Saturated Power: +30 dBm @ 45% PAE
Output P1dB: +27 dBm
Single Supply: +5V
Power Down Capability
Low External Part Count
Compact MSOP Package: 14.8 mm
2
Electrical Specifications, T
A = +25 °C, Vs = 5V, Vctl = 5V
Typical Applications
The HMC327MS8G(E) is ideal for:
• Wireless Local Loop
• WiMAX & Fixed Wireless
• Access Points
• Subscriber Equipment
Parameter
Min.
Typ.
Max.
Units
Frequency Range
3 - 4
GHz
Gain
17
21
24
dB
Gain Variation Over Temperature
0.025
0.035
dB / °C
Input Return Loss
15
dB
Output Return Loss
8dB
Output Power for 1dB Compression (P1dB)
24
27
dBm
Saturated Output Power (Psat)
30
dBm
Output Third Order Intercept (IP3)
36
40
dBm
Noise Figure
5dB
Supply Current (Icq)
Vctl* = 0V/5V
0.002 / 250
mA
Control Current (Ipd)
Vctl* = 5V
7
mA
Switching Speed
tON, tOFF
40
ns
*See Application Circuit for proper biasing configuration.


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