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HMC327MS8G Datasheet(PDF) 4 Page - Hittite Microwave Corporation

Part No. HMC327MS8G
Description  GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
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HMC327MS8G Datasheet(HTML) 4 Page - Hittite Microwave Corporation

   
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 5
Outline Drawing
Absolute Maximum Ratings
Gain, Power & Quiescent Supply
Current vs. Vpd @ 3.5 GHz
Collector Bias Voltage (Vcc)
+5.5V
Control Voltage (Vpd)
+5.5V
RF Input Power (RFIN)(Vs = Vctl = +5V)
+16 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 29 mW/°C above 85 °C)
1.88 W
Thermal Resistance
(junction to ground paddle)
34 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
5
10
15
20
25
30
0
50
100
150
200
250
2.5
3
3.5
4
4.5
5
P1dB
Psat
Gain
Icq
Vctl (V)
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC327MS8G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H327
XXXX
HMC327MS8GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H327
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz


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