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HMC233G8 Datasheet(PDF) 1 Page - Hittite Microwave Corporation

Part # HMC233G8
Description  GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz
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Manufacturer  HITTITE [Hittite Microwave Corporation]
Direct Link  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC233G8 Datasheet(HTML) 1 Page - Hittite Microwave Corporation

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10
10 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC233G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6 GHz
v00.0504
General Description
Features
Functional Diagram
The HMC233G8 is a broadband high isolation non-
reflective GaAs MESFET SPDT switch in a hermetic
surface mount package. Covering DC to 6 GHz, the
switch features >44 dB isolation up to 2 GHz and
>31 dB isolation up to 6 GHz. The switch operates
using complementary negative control voltage logic
lines of -5/0V and requires no bias supply.
Isolation: 44 dB @ 2.0 GHz
31 dB @ 6.0 GHz
Insertion Loss: 1.5 dB Typical @ 4.0 GHz
Non-Reflective Design
Hermetic Surface Mount Package
Electrical Specifications, T
A = +25° C, With 0/-5V Control, 50 Ohm System
Typical Applications
The HMC233G8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
1.3
1.5
1.8
1.6
1.8
2.2
dB
dB
dB
Isolation
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
39
30
26
44
35
31
dB
dB
dB
Return Loss
“On State”
DC - 5.0 GHz
DC - 6.0 GHz
17
14
dB
dB
Return Loss RF1, RF2
“Off State”
DC - 4.0 GHz
DC - 6.0 GHz
12
8
dB
dB
Input Power for 1 dB Compression
0.5 - 6.0 GHz
22
27
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 6.0 GHz
46
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 6.0 GHz
3
6
ns
ns


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