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UFT800F Datasheet(PDF) 2 Page - Diotec Semiconductor |
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UFT800F Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page UFT800A ... UFT800J Characteristics Kennwerte Type Typ Reverse recovery time Sperrverzugszeit Reverse recovery time Sperrverzugszeit Tj = 25°C trr [ns] 1) trr [ns] 2) UFT800A ... UFT800D < 25 < 35 UFT800F ... UFT800J < 35 < 45 Leakage current Sperrstrom Tj = 25°C VR = VRRM IR < 10 µA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 2.5 K/W 1 IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A 2 IF = 1.0 A, di/dt = -50 A/µs, VR = 30 V 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. Gehäusetemperatur Zul. Richtstrom 120 100 80 60 40 20 0 I FAV [%] [°C] T C 150 100 50 0 10 10 1 10 10 2 -1 -2 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 V F 0.8 1.0 1.2 1.4 [V] 1.8 T = 25°C j T = 125°C j 200a-(5a-0.95v) |
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Similar Description - UFT800F |
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