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SBCT1060 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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SBCT1060 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page SBCT1020 ... SBCT10100 SBCT1020 ... SBCT10100 Schottky Barrier Rectifier Diodes – Common Cathode Schottky-Barrier-Gleichrichterdioden – Gemeinsame Kathode Version 2010-04-29 Dimensions - Maße [mm] Nominal Current Nennstrom 10 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20...100 V Plastic case Kunststoffgehäuse TO-220AB Weight approx. Gewicht ca. 2.2g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward Voltage Durchlass-Spannung VF [V] 1) 2) IF = 5 A IF = 10 A SBCT1020 20 20 < 0.55 < 0.63 SBCT1030 30 30 < 0.55 < 0.63 SBCT1040 40 40 < 0.55 < 0.63 SBCT1045 45 45 < 0.55 < 0.63 SBCT1050 50 50 < 0.70 < 0.79 SBCT1060 60 60 < 0.70 < 0.79 SBCT1090 90 90 < 0.85 < 0.92 SBCT10100 100 100 < 0.85 < 0.92 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV IFAV 5 A 2) 10 A 3) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 20 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 100/120 A 2) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 50 A2s 2) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C 1 Tj = 25°C 2 Per diode − Pro Diode 3 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb) © Diotec Semiconductor AG http://www.diotec.com/ 1 4 3 2 1 4 3 1 Type Typ 2.54 ±0.1 0.8 ±0.2 1.3±0.1 10.1±0.3 Ø ±0.2 3.8 1.2±0.2 0.42 ±0.4 4.5±0.2 2.67 ±0.2 2 |
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