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DS1321 Datasheet(PDF) 6 Page - Dallas Semiconductor |
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DS1321 Datasheet(HTML) 6 Page - Dallas Semiconductor |
6 / 12 page DS1321 6 of 12 ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground -0.5V to +7.0V Operating Temperature -40 °C to +85°C Storage Temperature -55 °C to +125°C Soldering Temperature 260 °C for 10 seconds * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. RECOMMENDED DC OPERATING CONDITIONS (-40°C to +85°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Supply Voltage TOL=GND VCCI 4.75 5.0 5.5 V 1 Supply Voltage TOL=VCCO VCCI 4.5 5.0 5.5 V 1 Battery Supply Voltage VBAT 2.0 3.0 6.0 V 1 Logic 1 Input VIH 2.0 VCCI+0.3 V 1, 12 Logic 0 Input VIL -0.3 +0.8 V 1, 12 DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI ³ VCCTP) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Operating Current (TTL inputs) ICC1 1 1.5 mA 2 Operating Current (CMOS inputs) ICC2 100 150 µA 2, 5 RAM Supply Voltage VCCO VCC1 -0.2 V 1 RAM Supply Current (VCCO ³ VCCI -0.2V) ICCO1 185 mA 3 Supply Current (VCCO ³ VCCI -0.3V) ICCO2 260 mA 4 VCC Trip Point (TOL=GND) VCCTP 4.50 4.62 4.75 V 1 VCC Trip Point (TOL=VCCO) VCCTP 4.25 4.37 4.50 V 1 VBAT Trip Point VBTP 2.50 2.6 2.70 V 1 Output Current @ 2.2V IOH -1 mA 7, 10 Output Current @ 0.4V IOL 4 mA 7, 10 Input Leakage IIL -1.0 +1.0 µA Output Leakage ILO -1.0 +1.0 µA Battery Monitoring Test Load RINT 0.8 1.2 1.5 MΩ DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI < VBAT; VCCI < VCCTP) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Battery Current IBAT 100 nA 2 Battery Backup Current ICCO3 500 µA 6 Supply Voltage VCCO VBAT-0.2 V 1 CEO Output VOHL VBAT-0.2 V 1, 8 |
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