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PST1600M Datasheet(PDF) 1 Page - Diotec Semiconductor |
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PST1600M Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page PST1600A ... PST1600M PST1600A ... PST1600M Silicon Rectifier Diodes – Half Bridge Silizium-Gleichrichterdioden– Halbbrücke Version 2010-03-31 Dimensions - Maße [mm] Nominal current Nennstrom 16 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse TO-220AB Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25°C IF = 5 A IF = 8 A PST1600A 50 50 < 1.0 < 1.1 PST1600B 100 100 < 1.0 < 1.1 PST1600D 200 200 < 1.0 < 1.1 PST1600G 400 400 < 1.0 < 1.1 PST1600J 600 600 < 1.0 < 1.1 PST1600K 800 800 < 1.0 < 1.1 PST1600M 1000 1000 < 1.0 < 1.1 Max. average forward current, R-load Dauergrenzstrom mit R-Last TC = 100°C TC = 100°C IFAV IFAV 8 A 1) 16 A 2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 3) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 90 A2s 1) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C 1 Per diode – Pro Diode 2 Output current when operating two devices in a full bridge configuration Ausgangstrom bei Betrieb zweier Bauteile als Vollbrücke 3 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 4 3 2 1 4 3 1 Type Typ 2.54 ±0.1 0.8±0.2 1.3 ±0.1 10.1 ±0.3 Ø ±0.2 3.8 1.2 ±0.2 0.42 ±0.4 4.5 ±0.2 2.67±0.2 2 |
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