S21MD4V

S21MD4V

s Features

s Applications

1. Built-in zero-cross circuit

2. High critical rate of rise of OFF-state volt-

3. High repetitive peak OFF-state voltage

4. Isolation voltage between input and output

1. For triggering medium/high power triac

s Absolute Maximum Ratings

( Ta = 25˚C)

∗1 Sine wave

∗3 For 10 seconds

s Outline Dimensions

( Unit : mm)

Parameter

Symbol

Rating

Unit

Input

Forward current

50

mA

Reverse voltage

6V

Output

100

1.2

A

600

V

Operating temperature

- 30 to + 100

˚C

Storage temperature

- 55 to + 125

˚C

260

˚C

S21MD4V

θ

mark

Anode

diagram

Internal connection

Zero-cross

circuit

1

2

3

4

5

6

12

3

4

5

6

1 Anode

2 Cathode

3 NC

4 Anode/

Cathode

5 No external

connection

6 Anode/

Cathode

g

Lead forming type of S21MD4V is also available. (S21MD4W

5. UL recognized, file No. E64380 ( S21MD4V/ S21MD4W )

g S21MD4V is for 200V line

RMS ON-state current

Repetitive peak OFF-state voltage

Built-in Zero-cross Circuit, High Noise

Resistance Type Phototriac Coupler

: 5 000Vrms

5 000

∗2 40 to 60% RH, AC for 1 minute, f = 60HZ

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

)

age ( dV/dt : MIN. 100V/

µs)

θ : 0 to 13 ˚

gg TUV ( DIN-VDE0884 ) approved type is also available as an option.

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