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SHD118136 Datasheet(PDF) 1 Page - Sensitron |
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SHD118136 Datasheet(HTML) 1 Page - Sensitron |
1 / 3 page 2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 913, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Ultra Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 200 V Max. Average Forward Current IF(AV) 50% duty cycle, rectangular wave form (per leg) 7.5 A Max. Peak One Cycle Non- Repetitive Surge Current IFSM 8.3 ms, half Sine wave (per leg) 140 A Non-Repetitive Avalanche Energy EAS TJ = 25 C, IAS = 0.4 A, L = 40mH 7.7 mJ Repetitive Avalanche Current IAR IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR 0.4 A Maximum Thermal Resistance R JC - 3.2 C/W Max. Junction Temperature TJ - -65 to +200 C Max. Storage Temperature Tstg - -65 to +200 C Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop VF1 @ 7.5A, Pulse, TJ = 25 C 0.92 V (per leg) VF2 @ 7.5A, Pulse, TJ = 125 C 0.76 V Max. Reverse Current IR1 @VR = 200V, Pulse, TJ = 25 C 0.05 mA (per leg) IR2 @VR = 200V, Pulse, TJ = 125 C 0.5 mA Max. Junction Capacitance (per leg) CT @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) 150 pF Max. Reverse Recovery Time trr IF = 0.5 A, IR = 1.0 A, IRM = 0.25 A, TJ = 25 C 25 nsec SHD118136 SHD118136B |
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