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2N2222AC1 Datasheet(PDF) 2 Page - Seme LAB |
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2N2222AC1 Datasheet(HTML) 2 Page - Seme LAB |
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SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8359 Issue 2 Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ Max. Units V(BR)CEO (1) Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 50 V VCB = 75V IE = 0 10 µA VCB = 60V IE = 0 10 nA ICBO Collector Cut-Off Current TA = 150°C 10 µA VEB = 6V IC = 0 10 µA IEBO Emitter Cut-Off Current VEB = 4V IC = 0 10 nA ICES Collector Cut-Off Current VCE = 50V 50 nA IC = 150mA IB = 15mA 0.3 VCE(sat) (1) Collector-Emitter Saturation Voltage IC = 500mA IB = 50mA 1.0 IC = 150mA IB = 15mA 0.6 1.2 VBE(sat) (1) Base-Emitter Saturation Voltage IC = 500mA IB = 50mA 2 V IC = 0.1mA VCE = 10V 50 IC = 1.0mA VCE = 10V 75 325 IC = 10mA VCE = 10V 100 TA = -55°C 35 IC = 150mA VCE = 10V 100 300 hFE (1) Forward-current transfer ratio IC = 500mA VCE = 10V 30 DYNAMIC CHARACTERISTICS IC = 20mA VCE = 20V | hfe | Small signal forward-current transfer ratio f = 100MHz 2.5 IC = 1.0mA VCE = 10V hfe Small Signal Current Gain f = 1.0KHz 50 VCB = 10V IE = 0 Cobo Output Capacitance f = 1.0MHz 8 VEB = 0.5V IC = 0 Cibo Input Capacitance f = 1.0MHz 30 pF IC = 150mA VCC = 30V ton Turn-On Time IB1 = 15mA 35 IC = 150mA VCC = 30V toff Turn-Off Time IB1 = - IB2 = 15mA 300 ns Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% |
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