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2N2222AC1 Datasheet(PDF) 2 Page - Seme LAB

Part No. 2N2222AC1
Description  SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

2N2222AC1 Datasheet(HTML) 2 Page - Seme LAB

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SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
Semelab Limited
Semelab Limited
Semelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8359
Issue 2
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = 10mA
IB = 0
50
V
VCB = 75V
IE = 0
10
µA
VCB = 60V
IE = 0
10
nA
ICBO
Collector Cut-Off Current
TA = 150°C
10
µA
VEB = 6V
IC = 0
10
µA
IEBO
Emitter Cut-Off Current
VEB = 4V
IC = 0
10
nA
ICES
Collector Cut-Off Current
VCE = 50V
50
nA
IC = 150mA
IB = 15mA
0.3
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 500mA
IB = 50mA
1.0
IC = 150mA
IB = 15mA
0.6
1.2
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 500mA
IB = 50mA
2
V
IC = 0.1mA
VCE = 10V
50
IC = 1.0mA
VCE = 10V
75
325
IC = 10mA
VCE = 10V
100
TA = -55°C
35
IC = 150mA
VCE = 10V
100
300
hFE
(1)
Forward-current transfer
ratio
IC = 500mA
VCE = 10V
30
DYNAMIC CHARACTERISTICS
IC = 20mA
VCE = 20V
| hfe |
Small signal forward-current
transfer ratio
f = 100MHz
2.5
IC = 1.0mA
VCE = 10V
hfe
Small Signal Current Gain
f = 1.0KHz
50
VCB = 10V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
8
VEB = 0.5V
IC = 0
Cibo
Input Capacitance
f = 1.0MHz
30
pF
IC = 150mA
VCC = 30V
ton
Turn-On Time
IB1 = 15mA
35
IC = 150mA
VCC = 30V
toff
Turn-Off Time
IB1 = - IB2 = 15mA
300
ns
Notes
Notes
Notes
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%


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