SILICON PLANAR

EPITAXIAL NPN TRANSISTOR

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8359

Issue 2

Page 1 of 4

2N2222AC1

•

High Speed Saturated Switching

•

Hermetic Surface Mounted Package.

•

Ideally suited for High Speed Switching

and General Purpose Applications

•

Screening Options Available

A = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

75V

VCEO

Collector – Emitter Voltage

50V

VEBO

Emitter – Base Voltage

6V

IC

Continuous Collector Current

800mA

PD

Total Power Dissipation at

TA = 25°C

500mW

Derate Above 37.5°C

3.08mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJA

Thermal Resistance, Junction To Ambient

325

°C/W