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LRS1341 Datasheet(PDF) 8 Page - Sharp Corporation |
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LRS1341 Datasheet(HTML) 8 Page - Sharp Corporation |
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8 / 24 page  LRS1341/LRS1342 Stacked Chip (16M Flash & 2M SRAM) 8 Data Sheet DC CHARACTERISTICS TA = -25°C to + 85°C, VCC = 2.7 V to 3.6 V NOTES: 1. Reference values at VCC = 3.0 V and TA = +25°C. 2. Includes F-RY/BY. 3. Automatic Power Savings (APS) for Flash Memory reduces typi- cal ICCR to 3 mA at 2.7 VCC in static operation. 4. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH. 5. Block erases and word writes are inhibited when F-VPP ≤VPPLK and not guaranteed in the range between VPPLK (MAX.) and VPPH (MIN.), and above VPPH (MAX.). 6. F-RP connection to a VHH supply is allowed for a maximum cumu- lative period of 80 hours. PARAMETER SYMBOL CONDITION MIN. TYP.1 MAX. UNIT NOTES Input leakage current ILI VIN = VCC or GND -1.5 +1.5 µA Output leakage current ILO VOUT = VCC or GND -1.5 +1.5 µA F-VCC Standby Current ICCS F-CE = F-RP = F-VCC ± 0.2 V F-WP = F-VCC ± 0.2 V or F-GND ± 0.2 V 25 50 µA 2 F-CE = F-RP = VIH, F-WP = VIH or VIL 0.2 2 mA Deep Power-Down Current ICCD F-RP = F-GND ± 0.2 V, IOUT (F-RY/BY) = 0 mA 510 µA Read Current ICCR CMOS input, F-CE = F-GND, f = 5 MHz, IOUT = 0 mA 25 mA 3, 4 TTL input, F-CE = F-GND, f = 5 MHz, IOUT = 0 mA 30 mA 3, 4 Word Write Current ICCW F-VPP = 2.7 V to 3.6 V 17 mA F-VPP = 11.4 V to 12.6 V 12 mA Block Erase Current ICCE F-VPP = 2.7 V to 3.6 V 17 mA F-VPP = 11.4 V to 12.6 V 12 mA Word Write Block Erase Suspend Current ICCWS ICCES F-CE = VIH 6mA F-VPP Standby or Read Current IPPS IPPR F-VPP = F-VCC ±2 ±15 µA F-VPP > F-VCC 10 200 µA Deep Power-Down Current IPPD F-RP = F-GND ± 0.2 V 0.1 5 µA Word Write Current IPPW F-VPP = 2.7 V to 3.6 V 12 40 mA F-VPP = 11.4 V to 12.6 V 30 mA Block Erase Current IPPE F-VPP = 2.7 V to 3.6 V 8 25 mA F-VPP = 11.4 V to 12.6 V 20 mA Word Write or Block Erase Suspend Current IPPWS IPPES F-VPP = VPPH 10 200 µA S-VCC Standby Current ISB S-CE1, S-CE2 ≥ S-VCC - 0.2 V or S-CE2 ≤0.2 V 45 µA ISB1 S-CE1 = VIH or S-CE2 = VIL 3mA Operation Current ICC1 S-CE1 = VIL, S-CE2 = VIH, VIN = VIL or VIH, tCYCLE = MIN., II/O = 0 mA 45 mA ICC2 S-CE1 = 0.2 V, S-CE2 = S-VCC - 0.2 V, VIN = S-VCC - 0.2 V, or 0.2 V tCYCLE = 1 µs, II/O = 0 mA 8mA Input LOW Voltage VIL -0.2 0.6 V Input HIGH Voltage VIH 2.2 VCC + 0.2 V Output LOW Voltage VOL IOL = 0.5 mA 0.4 V 2 Output HIGH Voltage (CMOS) VOH1 IOH = -0.5 mA 2.2 V 2 F-VPP Lockout during Normal Operations VPPLK 1.5 V 5 F-VPP Word Write or Block Erase Operations VPPH1 2.7 3.6 V VPPH2 11.4 12.6 V F-VCC Lockout Voltage VLKO 1.5 V F-RP Unlock Voltage VHH Unavailable F-WP 11.4 12.6 V 6 |
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Similar Description - LRS1341 |
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