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TSM5ND50 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM5ND50 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 9 page  TSM5ND50 500V N-Channel Power MOSFET 2/9 Version: F11 Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2.2A RDS(ON) -- 1.2 1.5 Gate Threshold Voltage VDS = VGS, ID = 50uA VGS(TH) 3.0 -- 4.8 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 uA Forward Transconductance VDS = 15V, ID = 2.2A gfs -- 3.1 -- S Dynamic b Total Gate Charge VDS = 250V, ID = 4.4A, VGS = 10V Qg -- 20 -- nC Gate-Source Charge Qgs -- 4 -- Gate-Drain Charge Qgd -- 10 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 535 -- pF Output Capacitance Coss -- 75 -- Reverse Transfer Capacitance Crss -- 17 -- Switching c Turn-On Delay Time VGS = 10V, ID = 4.4A, VDD = 250V, RG = 25 td(on) -- 21.6 -- nS Turn-On Rise Time tr -- 11.7 -- Turn-Off Delay Time td(off) -- 14.5 -- Turn-Off Fall Time tf -- 4.5 -- Source Drain Diode Source-drain Current ISD -- -- 4.4 A Diode Forward Voltage IS = 4.4A, VGS = 0V VSD -- 0.82 1.2 V Reverse Recovery Time VDD = 30V, ISD = 4.4A, dIF/dt = 100A/us. TJ=150ºC trr -- 310 -- nS Reverse Recovery Charge Qrr -- 1425 -- nC Reverse Recovery Current IRRM -- 9.2 -- A Notes: 1. Pulse test: pulse width ≤300uS, duty cycle ≤2% 2. ISD<4.4A, di/dt<200A/us, VDD<BVDSS 3. Starting VDD = 50V, IAS=4.4A, TJ=25ºC 4. For design reference only, not subject to production testing. 5. Switching time is essentially independent of operating temperature. |
Similar Part No. - TSM5ND50_11 |
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Similar Description - TSM5ND50_11 |
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