SILICON EPITAXIAL

NPN TRANSISTOR

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9104

Issue 2

Page 1 of 3

2N5154N1B

A = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage (IE = 0)

100V

VCEO

Collector – Emitter Voltage (IB = 0)

80V

VEBO

Emitter – Base Voltage

5.5V

IC

Continuous Collector Current

2A

ICM

Peak Collector Current

(1)

10A

PD

Total Power Dissipation at

TC = 25°C

70W

Derate Above 25°C

400 mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case (TC = 25°C)

2.5

°C/W

(1)

This value applies for Pw

≤ 8.3ms, duty cycle ≤ 1%.