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2N5015 Datasheet(PDF) 1 Page - Seme LAB |
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2N5015 Datasheet(HTML) 1 Page - Seme LAB |
1 / 2 page 2N5015 2N5015S Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7992 issue 1 ABSOLUTE MAXIMUM RATINGS T CASE = 25°C unless otherwise stated V CBO Collector - Base Voltage 1000V V CER Collector - Emitter Voltage (R BE = 1.0KΩ) 1000V V EBO Emitter – Base Voltage 5V I C Continuous Collector Current 0.5A P tot Total Power Dissipation T case = 50°C 2W De-rate Linearly T case > 25°C 20mW/°C T stg, TJ Operating and Storage Temperature Range -55 to +150°C FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH BREAKDOWN VOLTAGE • LOW SATURATION VOLTAGE • HERMETIC TO5 or TO39 (‘S’ Suffix) PACKAGE • HI-RELIABILITY SCREENING OPTIONS AVAILABLE APPLICATIONS For high reliability general purpose high voltage switching and linear applications requiring small size and low weight devices. HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR TO5 (TO-205AA) Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector MECHANICAL DATA Dimensions in mm (inches) 0.89 (0.035) max. 38.00 (1.5) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45° 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) |
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