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RB751V-40RR Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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RB751V-40RR Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 3 page  RB751V-40 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Electrical Characteristics IF= VR= Junction Capacitance Tape & Reel specification - 2 0.37 CJ Units Max Type Number V pF 1.0mA 30V uA Symbol Min 3.73 ± 0.10 Forward Voltage - Reverse Leakage Current IR VR=0V, f=1.0MHz 0.5 VF Feed hole width D2 13.0 ± 0.20 Item Symbol Dimension(mm) Carrier depth C 1.68 ±0.10 1.7 ± 0.10 D1 55 Min Sprocket hole 1.5 ± 0.1 4.00 ±0.10 178 ± 1 Carrier width A Reel outside diameter D d Carrier length B Reel inner diameter 8.00 ±0.20 E 1.75 ±0.10 Punch hole position F 3.50 ±0.05 Sprocke hole pitch Embossment center Sprocke hole position P0 Reel width W1 14.4 Max P1 2.00 ±0.05 Overall tape thickness T 0.23 ± 0.05 Tape width W Top Cover Tape Carieer Tape Any Additional Label (If Required) TSC label W1 D1 D2 D T C d P1 P0 A B F W E Version : B10 |
Similar Part No. - RB751V-40RR |
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Similar Description - RB751V-40RR |
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