74LVC2G08GS datasheet(7/21 Pages) NXP

Part #	74LVC2G08GS

Description	Dual 2-input AND gate

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74LVC2G08

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Product data sheet

Rev. 9 — 20 October 2010

7 of 21

NXP Semiconductors

74LVC2G08

Dual 2-input AND gate

[1]

All typical values are measured at Tamb = 25 °C.

11. Dynamic characteristics

VOH

HIGH-level output voltage VI =VIH or VIL

IO = −100 μA; VCC = 1.65 V to 5.5 V

VCC − 0.1

-

V

IO = −4 mA; VCC = 1.65 V

0.95

-

V

IO = −8 mA; VCC = 2.3 V

1.7

-

V

IO = −12 mA; VCC = 2.7 V

1.9

-

V

IO = −24 mA; VCC = 3.0 V

2.0

-

V

IO = −32 mA; VCC = 4.5 V

3.4

-

V

VOL

LOW-level output voltage

VI = VIH or VIL

IO = 100 μA; VCC = 1.65 V to 5.5 V

-

0.1

V

IO = 4 mA; VCC = 1.65 V

-

0.70

V

IO = 8 mA; VCC = 2.3 V

-

0.45

V

IO = 12 mA; VCC = 2.7 V

-

0.60

V

IO = 24 mA; VCC = 3.0 V

-

0.80

V

IO = 32 mA; VCC = 4.5 V

-

0.80

V

II

input leakage current

VI = 5.5 V or GND; VCC =0 V to 5.5 V

-

±20

μA

IOFF

power-off leakage current VI or VO = 5.5 V; VCC = 0 V

-

±20

μA

ICC

supply current

VI = 5.5 V or GND;

VCC = 1.65Vto 5.5V; IO =0A

--

40

μA

ΔI

CC

additional supply current

per pin; VI = VCC − 0.6 V; IO = 0 A;

VCC = 2.3 V to 5.5 V

--

5000

μA

Table 7.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

tpd

propagation delay

nA, nB to nY; see Figure 8

[2]

VCC = 1.65 V to 1.95 V

1.0

3.2

9.0

1.0

11.3

ns

VCC = 2.3 V to 2.7 V

0.5

2.2

5.1

0.5

6.4

ns

VCC = 2.7 V

1.0

2.5

5.3

1.0

6.7

ns

VCC = 3.0 V to 3.6 V

0.5

2.1

4.7

0.5

5.9

ns

VCC = 4.5 V to 5.5 V

0.5

1.7

3.8

0.5

4.8

ns

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