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RF6886SR Datasheet(PDF) 4 Page - RF Micro Devices

Part # RF6886SR
Description  3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF6886SR Datasheet(HTML) 4 Page - RF Micro Devices

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RF6886
DS100817
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Pin
Function
Description
Interface Schematic
1, 2, 3
VCC1
Inter-stage match and bias for first stage output. Connect inter-stage
matching capacitor to pin with a short trace. Connect low frequency
bypass capacitor to this pin with a long trace. See evaluation board lay-
out for detail.
5VREG2
This pin requires a regulated supply to set output stage DC bias.
6RF IN
RF Input. An external blocking capacitor is required if this pin is con-
nected to DC path.
4,
7-12,
20, 21
NC
No Connect.
13, 14,
15, 16,
17, 18
RF OUT
RF Output and bias for the output stage. The power supply for the out-
put transistor needs to be supplied to this pin. This can be done
through an RF inductor that supports the required DC currents.
19
VREG1
This pin requires a regulated supply to set driver stage DC bias.
22
VCC BIAS
Bias circuitry supply voltage.
23
PWR SENSE PWR SEN and PWR REF pins can be used in conjunction with an exter-
nal feedback path to provide an RF power control function for the
RF6886. The power control function is based on sampling the RF drive
to the final stage of the RF6886.
24
PWR REF
Same as pin 23.
Pkg
Base
GND
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device are
required.
RF IN
VCC
Bond Wire
Inductance
BIAS
RF OUT
BIAS
RF OUT
PWR SEN
PWR REF
BIAS


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