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2010 ROHM Co., Ltd. All rights reserved.

2010.06 - Rev.B

1.2V Drive Nch MOSFET

RUU002N05

 Structure

 Dimensions

(Unit : mm)

Silicon N-channel MOSFET

Features

1) High speed switing.

2) Small package(UMT3).

3)Ultra low voltage drive(1.2V drive).

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

Code

T106

Basic ordering unit (pieces)

3000

RUU002N05



 Absolute maximum ratings

(Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

50

V

Gate-source voltage

8V

Continuous

200

mA

Pulsed

800

mA

Continuous

150

mA

Pulsed

800

mA

Power dissipation

200

mW

Channel temperature

Tch

150

C

Range of storage temperature

Tstg

55 to +150

C

*1 Pw

10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Symbol

Limits

Unit

Channel to ambient

Rth (ch-a)

625

C / W

* Each terminal mounted on a recommended land.

Parameter

Type

Source current

(Body Diode)

Drain current

Parameter

*2

*1

*1

*

*2

*1

*1

UMT3

(SC-70)

<SOT-323>

(1) SOURCE

(2) GATE

(3) DRAIN

∗1 BODY DIODE

∗2 ESD PROTECTION DIODE

(2)

(1)

∗2

∗1

(3)

Abbreviated symbol : RH