Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

4V Drive Nch MOSFET

RSJ300N10



Structure



Dimensions (Unit : mm)

Silicon N-channel MOSFET



Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.



Application

Switching



Packaging specifications



Inner circuit

Package

Taping

Code

TL

Basic ordering unit (pieces)

1000

RSJ300N10





Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

100

V

Gate-source voltage

20

V

Continuous

30

A

Pulsed

60

A

Continuous

30

A

Pulsed

60

A

Power dissipation

50

W

Channel temperature

Tch

150

C

Range of storage temperature

Tstg

55 to 150

C

*1 Limited only by maximum temperature allowed.

*2 Pw≦10

s, Duty cycle≦1%



Thermal resistance

Symbol

Limits

Unit

Channel to Case

Rth (ch-c)

2.5

C / W

*Mounted on a ceramic board.

Parameter

Type

Source current

(Body Diode)

Drain current

Parameter

*

*3

*2

*2

*1

*1

(1) Gate

(2) Drain

(3) Source

∗

1 ESD PROTECTION DIODE

∗

2 BODY DIODE

LPTS

10.1

4.5

0.78

2.54

5.08

1.24

0.4

1.3

2.7

(1)

(2)

(3)

∗2

∗1

(1)

(2)

(3)

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2011.08 - Rev.A