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RSJ300N10 Datasheet(PDF) 1 Page - Rohm |
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RSJ300N10 Datasheet(HTML) 1 Page - Rohm |
1 / 7 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch MOSFET RSJ300N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. Application Switching Packaging specifications Inner circuit Package Taping Code TL Basic ordering unit (pieces) 1000 RSJ300N10 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS 20 V Continuous ID 30 A Pulsed IDP 60 A Continuous IS 30 A Pulsed ISP 60 A Power dissipation PD 50 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Limited only by maximum temperature allowed. *2 Pw≦10 s, Duty cycle≦1% *3 Tc=25℃ Thermal resistance Symbol Limits Unit Channel to Case Rth (ch-c) 2.5 C / W *Mounted on a ceramic board. Parameter Type Source current (Body Diode) Drain current Parameter * *3 *2 *2 *1 *1 (1) Gate (2) Drain (3) Source ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE LPTS 10.1 4.5 0.78 2.54 5.08 1.24 0.4 1.3 2.7 (1) (2) (3) ∗2 ∗1 (1) (2) (3) 1/6 2011.08 - Rev.A |
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