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RP1L080SN Datasheet(PDF) 2 Page - Rohm

Part # RP1L080SN
Description  4V Drive Nch MOSFET
Download  7 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

RP1L080SN Datasheet(HTML) 2 Page - Rohm

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Data Sheet
RP1L080SN
　
Electrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Gate-source leakage
IGSS
--
10
AVGS=20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS
60
-
-
V
ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
--
1
AVDS=60V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
3.0
V
VDS=10V, ID=1mA
-17
24
ID=8.0A, VGS=10V
-19
27
ID=8.0A, VGS=4.5V
-20
28
ID=8.0A, VGS=4.0V
Forward transfer admittance
l Yfs l
8.5
-
-
S
ID=8.0A, VDS=10V
Input capacitance
Ciss
-
1700
-
pF
VDS=10V
Output capacitance
Coss
-
330
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
170
-
pF
f=1MHz
Turn-on delay time
td(on)
-
18
-
ns
ID=4.0A, VDD 30V
Rise time
tr
-
25
-
ns
VGS=10V
Turn-off delay time
td(off)
-
70
-
ns
RL=7.5
Fall time
tf
-
30
-
ns
RG=10
Total gate charge
Qg
-
40
-
nC VDD 30V
Gate-source charge
Qgs
-
5.0
-
nC ID=8.0A,
Gate-drain charge
Qgd
-
9.0
-
nC VGS=10V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
VSD
-
-
1.2
V
Is=8.0A, VGS=0V
*Pulsed
Conditions
Conditions
m
Parameter
Parameter
Static drain-source on-state
resistance
RDS (on)
*
*
*
*
*
*
*
*
*
*
2/6
2011.08 - Rev.A


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