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RP1E070XN Datasheet(PDF) 1 Page - Rohm |
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RP1E070XN Datasheet(HTML) 1 Page - Rohm |
1 / 7 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch MOSFET RP1E070XN Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit Package Taping Code TR Basic ordering unit (pieces) 1000 RP1E070XN Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 7A Pulsed IDP 18 A Continuous IS 1.6 A Pulsed ISP 18 A Power dissipation PD 2.0 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw 10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Symbol Limits Unit Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board. Parameter Type Source current (Body Diode) Drain current Parameter * *2 *1 *1 MPT6 (Single) (1) (2) (3) (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE ∗2 ∗1 (6) (5) (1) (2) (3) (4) 1/6 2011.02 - Rev.A |
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