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RP1E070XN Datasheet(PDF) 1 Page - Rohm

Part # RP1E070XN
Description  4V Drive Nch MOSFET
Download  7 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

RP1E070XN Datasheet(HTML) 1 Page - Rohm

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Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4V Drive Nch MOSFET
RP1E070XN
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Application
Switching
Packaging specifications
Inner circuit
Package
Taping
Code
TR
Basic ordering unit (pieces)
1000
RP1E070XN
Absolute maximum ratings (Ta = 25
C)
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
Continuous
ID
7A
Pulsed
IDP
18
A
Continuous
IS
1.6
A
Pulsed
ISP
18
A
Power dissipation
PD
2.0
W
Channel temperature
Tch
150
C
Range of storage temperature
Tstg
55 to 150
C
*1 Pw
10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Symbol
Limits
Unit
Channel to Ambient
Rth (ch-a)
62.5
C / W
*Mounted on a ceramic board.
Parameter
Type
Source current
(Body Diode)
Drain current
Parameter
*
*2
*1
*1
MPT6
(Single)
(1)
(2)
(3)
(6)
(5)
(4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
∗2
∗1
(6)
(5)
(1)
(2)
(3)
(4)
1/6
2011.02 - Rev.A


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