RP1A090ZP datasheet(2/6 Pages) ROHM

Part #	RP1A090ZP

Description	1.5V Drive Pch MOSFET

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Data Sheet

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RP1A090ZP



Electrical characteristics (Ta = 25

°C)

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

IGSS

--

±10

μAVGS=±10V, VDS=0V

Drain-source breakdown voltage V(BR)DSS

−12

-

V

ID=

−1mA, VGS=0V

Zero gate voltage drain current

IDSS

--

−1

μAVDS=−12V, VGS=0V

Gate threshold voltage

VGS (th)

−0.3

-

−1.0

V

VDS=

−6V, ID=−1mA

-

8

12

ID=

−9A, VGS=−4.5V

-11

16

ID=

−4.5A, VGS=−2.5V

-15

23

ID=

−4.5A, VGS=−1.8V

-19

38

ID=

−1.8A, VGS=−1.5V

Forward transfer admittance

l Yfs l12

-

S

ID=

−9A, VDS=−6V

Input capacitance

Ciss

-

7400

-

pF

VDS=

−6V

Output capacitance

Coss

-

800

-

pF

VGS=0V

Reverse transfer capacitance

Crss

-

750

-

pF

f=1MHz

Turn-on delay time

td(on)

-

35

-

ns

ID=

−4.5A, VDD −6V

Rise time

tr

-

120

-

ns

VGS=

−4.5V

Turn-off delay time

td(off)

-

350

-

ns

RL=1.3

Ω

Fall time

tf

-

170

-

ns

RG=10

Ω

Total gate charge

Qg

-

59

-

nC ID=

−9A,

Gate-source charge

Qgs

-

11

-

nC VGS=

−4.5V

Gate-drain charge

Qgd

-9

-

nC VDD

−6V

*Pulsed



Body diode characteristics (Source-Drain) (Ta = 25

°C)

Symbol

Min.

Typ.

Max. Unit

Forward Voltage

VSD

--

−1.2

V

Is=

−9A, VGS=0V

*Pulsed

Conditions

m

Ω

Parameter

Static drain-source on-state

resistance

RDS (on)*

*

2/5

2010.07 - Rev.B

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