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RFU10TF6S Datasheet(PDF) 1 Page - Rohm |
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RFU10TF6S Datasheet(HTML) 1 Page - Rohm |
1 / 4 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Super Fast Recovery Diode RFU10TF6S Series Dimentions(Unit : mm) Structure Ultra Fast Recovery Applications General rectification Features 1)Single type.(TO-220) 2)Ultra High switching speed Construction Silicon epitaxial plnner Absolute maximum ratings(Tc=25 C) Symbol VRM VR Average rectified forward current Io Tc=50 C Tj Tstg Electrical characteristics(Tj=25 C) Symbol Min. Unit Forward voltage VF -V Reverse current IR - μA Reverse recovery time trr - ns Thermal Resistance Rth(j-c) - C / W Storage temperature 55 to 150 C A one cycle peak value, Tj=25 C Junction temperature 150 C Forward current surge peak IFSM 60Hz half sin wave, Non-repetitive 100 60Hz half sin wave, Resistance load, 10 A Reverse voltage Direct voltage 600 V Repetitive peak reverse voltage Duty≦0.5 600 V Parameter Conditions Limits Unit junction to case - 3.5 10 IF=0.5A,IR=1A,Irr=0.25×IR 16 25 VR=600V 0.03 Parameter Max. IF=10A 2.3 2.8 Conditions Typ. (1) (3) (1) (3) 1/3 2011.06 - Rev.A |
Similar Part No. - RFU10TF6S_11 |
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Similar Description - RFU10TF6S_11 |
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