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LH28F160BGH-TL Datasheet(PDF) 10 Page - Sharp Corporation |
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LH28F160BGH-TL Datasheet(HTML) 10 Page - Sharp Corporation |
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10 / 36 page  - 10 - LH28F160BG-TL/BGH-TL The CUI does not occupy an addressable memory location. It is written when WE# and CE# are active. The address and data needed to execute a command are latched on the rising edge of WE# or CE# (whichever goes high first). Standard microprocessor write timings are used. Fig. 10 and Fig. 11 illustrate WE# and CE# controlled write operations. 4 COMMAND DEFINITIONS When the VPP ≤ VPPLK, read operations from the status register, identifier codes, or blocks are enabled. Device operations are selected by writing specific commands into the CUI. Table 2 defines these commands. Table 1 Bus Operations MODE NOTE RP# CE# OE# WE# ADDRESS VPP DQ0-15 RY/BY# Read 1, 2, 3, 8 VIH or VHH VIL VIL VIH XX DOUT X Output Disable 3 VIH or VHH VIL VIH VIH X X High Z X Standby 3 VIH or VHH VIH XXXX High Z X Deep Power-Down 4 VIL XXXXX High Z High Z Read Identifier Codes 8 VIH or VHH VIL VIL VIH See Fig. 2 X(NOTE 5) High Z Write 3, 6, 7, 8 VIH or VHH VIL VIH VIL XX DIN X NOTES : 1. Refer to Section 6.2.3 "DC CHARACTERISTICS". When VPP ≤ VPPLK, memory contents can be read, but not altered. 2. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2 for VPP. See Section 6.2.3 "DC CHARACTERISTICS" for VPPLK and VPPH1/2 voltages. 3. RY/BY# is VOL when the WSM is executing internal block erase or word write algorithm. It is high-impedance when the WSM is not busy, in block erase suspend mode (with word write inactive), word write suspend mode or deep power-down mode. 4. RP# at GND±0.2 V ensures the lowest deep power- down current. 5. See Section 4.2 for read identifier code data. 6. VIH < RP# < VHH produce spurious results and should not be attempted. 7. Refer to Table 2 for valid DIN during a write operation. 8. Don’t use the timing both OE# and WE# are VIL. |
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