Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

Shottky barrier diode

RB876W



Applications



Dimensions (Unit : mm)



Land size figure (Unit : mm)

High frequency detection



Features

1) Ultra small mold type. (EMD3)

2) Low Ct and high detection efficiency.



Construction



Structure

Silicon epitaxial planar



Taping specifications (Unit : mm)



Absolute maximum ratings (Ta=25°C)

Symbol

Unit

V

Io

mA

Tj

°C

Tstg

°C



Electrical characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

-

-

0.35

V

-

-

120

μA

Ct

-

0.53

0.80

pF

Capacitance between terminals

Conditions

(*1) Rating of per diode

Parameter

Forward voltage

Reverse current

Junction temperature

125

Storage temperature

40 to 125

Average rectified forward current (*1)

10

Parameter

Limits

Reverse voltage

5

EMD3

1.0

0.5

0.5

0.7

0.6

0.6

4.0±0.1

2.0±0.05

φ1.55±0.1

　　　　　 0

φ0.5±0.1

0.3±0.1

1.8±0.1

0.9±0.2

φ

1.5

0.1

0

ROHM : EMD3

JEITA : SC-75A

JEDEC : SOT-416

dot (year week factory)

(3)

1.6± 0.2

1.0±0.1

0.5

0.5

(2)

(1)

0.15±0.05

0.7±0.1

0.55±0.1

0～0.1

0.2±0.1

　　-0.05

0.3±0.1

　　　 0.05

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2011.04 - Rev.B