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RB531S-30 Datasheet(PDF) 1 Page - Rohm |
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RB531S-30 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB531S-30 Applications Dimensions(Unit : mm) Land size figure(Unit : mm) General rectification Features 1)Ultra small mold type.(EMD2) 2)Low VF 3)High reliability Construction Silicon epitaxial planer Structure Taping specifications(Unit : mm) Absolute maximum ratings(Ta=25 C) Symbol Unit VR V Io mA IFSM mA Tj C Tstg C Electical voltage(Ta=25 C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 0.35 V IF=10mA IR -- 10 μA VR=10V Junction temperature 125 Storage temperature -40to+125 Parameter Reverse current Parameter Limits Reverse voltage(DC) 30 Average rectified forward current 100 Forward current surge peak(60Hz/1cyc) 500 ROHM : EMD2 JEITA : SC-79 JEDEC :SOD-523 dot (year week factory) 0.12±0.05 0.6±0.1 0.3±0.05 0.8±0.05 N EMD2 0.8 0.95±0.06 0 4.0±0.1 4.0±0.1 2.0±0.05 φ1.5±0.05 0.2±0.05 0.76±0.05 φ0.5 2.0±0.05 空ポケット 0.2 φ 1.55 ±0.05 0.90 ±0.05 0.75 ±0.05 Empty pocket 1/3 2011.03 - Rev.B |
Similar Part No. - RB531S-30_11 |
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Similar Description - RB531S-30_11 |
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