RB530XN

Diodes

Rev.B

1/3

Schottky barrier diode

RB530XN

Applications

External dimensions

(Unit : mm)

Land size figure

(Unit : mm)

Low current rectification

Sym bol

Min.

Typ.

Max.

Unit

Conditions

-

0.40

V

-

0.53

V

Revers e current

--

1

μA

orward voltage

Param eter

F

Sym bol

Unit

V

Io

m A

A

Tj

Ts tg

Lim its

30

100

Param eter

Revers e vltage

verage rectified forward current *1

orward current s urge peak 60Hz 1cyc *1

1

unction tem perature

torage tem perature

*1) Rating of per diode

125

-40 to +125

A

F

J

S

(

Features

1) Small mold type. (UMD6)

3) High reliability.

Construction

Structure

Each lead has same dimension

Silicon epitaxial planar

Taping dimensions

(Unit : mm)

Absolute maximum ratings

(Ta=25 C)

Electrical characteristics

(Ta=25 C, per chip)