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LH28F008SAT-85 Datasheet(PDF) 2 Page - Sharp Corporation |
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LH28F008SAT-85 Datasheet(HTML) 2 Page - Sharp Corporation |
2 / 27 page LH28F008SA 8M (1M × 8) Flash Memory 2 28F008SA-16 TOP VIEW 2 3 4 5 8 9 A6 A9 41 40 39 38 37 36 33 30 A11 A10 6 7 A7 A8 35 34 A13 A14 A16 A18 NC NC WE 10 11 12 43 42 A12 A5 13 32 NC 31 NC A4 A15 44-PIN SOP 14 15 16 17 18 19 20 21 27 24 29 28 26 25 RY/BY DQ7 DQ6 DQ5 DQ2 DQ3 DQ1 A0 DQ0 A1 GND GND VCC A17 A19 OE 44 1 RP VPP 22 23 DQ4 NC A3 A2 NC CE VCC Figure 2. 44-Pin SOP Configuration INTRODUCTION SHARP’S LH28F008SA 8M Flash File™ Memory is the highest density nonvolatile read/write solution for solid state storage. The LH28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and low power consumption pro- vide a more reliable, lower power, lighter weight and higher performance alternative to traditional rotating disk technology. The LH28F008SA brings new capabilities to portable computing. Application and operating sys- tem software stored in resident flash memory arrays provide instant-on rapid execute-in-place and protec- tion from obsolescence through in-system software updates. Resident software also extends system bat- tery life and increases relaibility by reducing disk drive accesses. For high density data acquisition applications, the LH28F008SA offers a more cost-effective and reliable alternative to SRAM and battery. Traditional high density embedded applications, such as telecommuni- cations, can take advantage of the LH28F008SA’s nonvolatility, blocking and minimal system code require- ments for flexible firmware and modular software designs. The LH28F008SA is offered in 40-pin TSOP (stan- dard) package. Pin assignments simplify board layout when integrating multiple devices in a flash memory array or subsystem. This device uses an integrated Command User Interface and state machine for simpli- fied block erasure and byte write. The LH28F008SA memory map consists of 16 separately erasable 64K blocks. SHARP’s LH28F008SA employs advanced CMOS circuitry for systems requiring low power consumption and noise immunity. Its 85 ns access time provides superior performance when compared with magnetic storage media. A deep powerdown mode lowers power consumption to 1 µW typical throughVCC, crucial in por- table computing, handheld instrumentation and other low-power applications. The PWD power control input also provides absolute data protection during system power up/down. DESCRIPTION The LH28F008SA is a high-perfor mance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen blocks of memory in typically 1.6 seconds, independent of the remaining blocks. Each block can be independently erased and written 100,000 cyles. Erase Suspend mode allows sys- tem software to suspend block erase to read data or execute code from any other block of the LH28F008SA. The LH28F008SA is available in the 40-pin TSOP (Thin Small Outline Package, 1.2 mm thick) package. Pinouts are shown in Figure 1 of this specification. The Command User Interface serves as the inter- face between the microprocessor or microcontroller and the internal operation of the LH28F008SA. Byte Write and Block Erase Automation allow byte write and block erase operations to be executed using a two-write command sequence to the Command User Interface. The internal Write State Machine (WSM) automatically executes the algorithms and timings nec- essary for byte write and block erase operations, including verifications, thereby unburdening the micro- processor or microcontroller. Writing of memory data is performed in byte increments typically within 9 µs, an 80% improvement over current flash memory products. IPP byte write and block erase currents are 10 mA typi- cal, 30 mA maximum. VPP byte write and block erase voltage is 11.4 V to 12.5 V. The Status Register indicates the status of the WSM and when the WSM successfully completes the desired byte write or block erase operation. |
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