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2SC1815-Y Datasheet(PDF) 1 Page - Micro Commercial Components |
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2SC1815-Y Datasheet(HTML) 1 Page - Micro Commercial Components |
1 / 3 page Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Marking : C1815 2SC1815- Y NPN Silicon Epitaxial Transistor TO-92 AE B C D G Electrical Characteristics @ 25 OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* (IC=0.1mAdc, IB=0) 50 Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) 60 Vdc V(BR)EBO Emitter-Base Breakdown Voltage (I E=100uAdc,IC=0) 5 Vdc ICBO Collector Cutoff Current (VCB=60Vdc, IE=0Adc) 0.1 uAdc ICEO Collector Cutoff Current (VCB=50Vdc, IE=0Adc) 0.1 uAdc IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0Adc) 0.1 uAdc ON CHARACTERISTICS hFE(1) DC Current Gain* (IC=2.0mAdc, VCE=6.0Vdc) 70 700 VCE(sat) Collector-Emitter Saturation Voltage (IC=100mAdc, IB=10mAdc) 0.25 Vdc VBE(sat) Base-Emitter Saturation Voltage (IC=100mAdc, IB=10mAdc) 1.0 Vdc SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=1.0mAdc, VCE=10Vdc, f=30MHz) 80 MHz CLASSIFICATION OF HFE (1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700 VBE Base-Emitter Voltage (IE=310mAdc) --- 1.45 Vdc Revision: C 20 11/08/22 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .170 .190 4.33 4.83 B .170 .190 4.30 4.83 C .550 .590 13.97 14.97 D .010 .020 0.36 0.56 E .130 .160 3.30 3.96 G .010 .104 2.44 2.64 TM Micro Commercial Components www.mccsemi.com 1 of 3 Epoxy meets UL 94 V-0 flammability rating 2SC1815- GR 2SC1815- BL 2SC1815-O • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) • Moisure Sensitivity Level 1 E C B • Operating and storage junction temperature range:-55 oC to +125oC |
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