DE375-102N10A

RF Power MOSFET

An

IXYS

Company

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Fort Collins, CO USA 80526

970-493-1901 Fax: 970-493-1903

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DE375-0001 DE-SERIES SPICE Model

The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expan-

sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms

eled with reversed biased diodes. This provides a varactor type response nec-

essary for a high power device model. The turn on delay and the turn off delay

are adjusted via Ron and Roff.

Figure 7 DE-SERIES SPICE Model

This SPICE model may be downloaded as a text file from the IXYSRF web site

at www.ixysrf.com/spice.htm

Net List:

.SUBCKT 102N10A 10 20 30

* TERMINALS: D G S

* 1000 Volt 10 Amp 1.2 ohm N-Channel Power MOSFET

* REV.A 05-23-00

M1 1 2 3 3 DMOS L=1U W=1U

RON 5 6 0.5

DON 6 2 D1

ROF 5 7 .1

DOF 2 7 D1

D1CRS 2 8 D2

D2CRS 1 8 D2

CGS 2 3 3.0N

RD

4 1 1.5

DCOS 3 1 D3

RDS 1 3 5.0MEG

LS

3 30 .5N

LD 10 4 1N

LG 20 5 1N

.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)

.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)

.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)

.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)

.ENDS

Doc #9200-0223-0001 Rev 2

© 2009 IXYS RF