IPD50R520CP datasheet(3/10 Pages) INFINEON

Part #	IPD50R520CP

Description	CoolMos Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD50R520CP

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

680

-

pF

Output capacitance

C oss

-31-

Effective output capacitance, energy

C o(er)

-29-

Effective output capacitance, time

C o(tr)

-63-

Turn-on delay time

t d(on)

-35-

ns

Rise time

t r

-14-

Turn-off delay time

t d(off)

-80-

Fall time

t f

-17-

Gate Charge Characteristics

Gate to source charge

Q gs

-3

-

nC

Gate to drain charge

Q gd

-5

-

Gate charge total

Q g

-13

17

Gate plateau voltage

V plateau

-

5.2

-

V

Reverse Diode

Diode forward voltage

V SD

V GS=0 V, I F=3.8 A,

T j=25 °C

-

0.9

1.2

V

Reverse recovery time

t rr

-

240

-

ns

Reverse recovery charge

Q rr

-

1.6

-

µC

Peak reverse recovery current

I rrm

-13-

A

1) J-STD20 and JESD22

2) Pulse width t

p limited by T j,max

3) Repetitive avalanche causes additional power losses that can be calculated asP

AV=E AR*f.

6) C

o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

4) I

SD≤I D, di /dt ≤400A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low and high side switch

V R=400 V, I F=I S,

di F/dt =100 A/µs

5) C

o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

Values

V GS=0 V, V DS=100 V,

f =1 MHz

V DD=400 V,

V GS=10 V, I D=3.8 A,

R G=48.3 Ω

V DD=400 V, I D=3.8 A,

V GS=0 to 10 V

V GS=0 V, V DS=0 V

to 400 V

Rev. 2.1

page 3

2008-04-10

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