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CY7C1387D-167AXC Datasheet(PDF) 11 Page - Cypress Semiconductor

Part # CY7C1387D-167AXC
Description  18-Mbit (512 K x 36/1 M x 18) Pipelined DCD Sync SRAM
Download  36 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1387D-167AXC Datasheet(HTML) 11 Page - Cypress Semiconductor

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CY7C1386D, CY7C1386F
CY7C1387D, CY7C1387F
Document Number: 38-05545 Rev. *H
Page 11 of 36
Truth Table
The Truth Table for CY7C1386D, CY7C1386F, CY7C1387D, and CY7C1387F follow.[6, 7, 8, 9, 10]
Operation
Add. Used CE1 CE2 CE3 ZZ
ADSP
ADSC
ADV WRITE
OE CLK
DQ
Deselect cycle, power-down
None
H
X
X
L
X
L
X
X
X
L–H Tristate
Deselect cycle, power-down
None
L
L
X
L
L
X
X
X
X
L–H Tristate
Deselect cycle, power-down
None
L
X
H
L
L
X
X
X
X
L–H Tristate
Deselect cycle, power-down
None
L
L
X
L
H
L
X
X
X
L–H Tristate
Deselect cycle, power-down
None
L
X
H
L
H
L
X
X
X
L–H Tristate
Sleep mode, power-down
None
X
X
X
H
X
X
X
X
X
X
Tristate
Read cycle, begin burst
External
L
H
L
L
L
X
X
X
L
L–H
Q
Read cycle, begin burst
External
L
H
L
L
L
X
X
X
H
L–H Tristate
Write cycle, begin burst
External
L
H
L
L
H
L
X
L
X
L–H
D
Read cycle, begin burst
External
L
H
L
L
H
L
X
H
L
L–H
Q
Read cycle, begin burst
External
L
H
L
L
H
L
X
H
H
L–H Tristate
Read cycle, continue burst
Next
X
X
X
L
H
H
L
H
L
L–H
Q
Read cycle, continue burst
Next
X
X
X
L
H
H
L
H
H
L–H Tristate
Read cycle, continue burst
Next
H
X
X
L
X
H
L
H
L
L–H
Q
Read cycle, continue burst
Next
H
X
X
L
X
H
L
H
H
L–H Tristate
Write cycle, continue burst
Next
X
X
X
L
H
H
L
L
X
L–H
D
Write cycle, continue burst
Next
H
X
X
L
X
H
L
L
X
L–H
D
Read cycle, suspend burst
Current
X
X
X
L
H
H
H
H
L
L–H
Q
Read cycle, suspend burst
Current
X
X
X
L
H
HHHH
L–H Tristate
Read cycle, suspend burst
Current
H
X
X
L
X
H
H
H
L
L–H
Q
Read cycle, suspend burst
Current
H
X
X
L
X
HHHH
L–H Tristate
Write cycle, suspend burst
Current
X
X
X
L
H
H
H
L
X
L–H
D
Write cycle, suspend burst
Current
H
X
X
L
X
H
H
L
X
L–H
D
Notes
6. X = Do not care, H = Logic HIGH, L = Logic LOW.
7. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
8. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
9. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after
the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tristate. OE is a don't care
for the remainder of the write cycle.
10. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tristate when OE is inactive
or when the device is deselected, and all data bits behave as output when OE is active (LOW).
[+] Feedback


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