NSS12200LT1G datasheet(1/5 Pages) ONSEMI

Part #	NSS12200LT1G

Description	12 V, 4.0 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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August, 2009 − Rev. 3

1

Publication Order Number:

NSS12200L/D

NSS12200LT1G

12 V, 4.0 A, Low VCE(sat)

PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

−12

Vdc

Collector-Base Voltage

VCBO

−12

Vdc

Emitter-Base Voltage

VEBO

−7.0

Vdc

Collector Current − Continuous

IC

−2.0

A

Collector Current − Peak

ICM

−4.0

A

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD (Note 1)

460

3.7

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 1)

270

°C/W

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD (Note 2)

540

4.3

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 2)

230

°C/W

Total Device Dissipation

(Single Pulse < 10 sec.)

PDsingle

(Note 3)

710

mW

Junction and Storage

Temperature Range

TJ, Tstg

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 100 mm2, 1 oz. copper traces.

2. FR−4 @ 500 mm2, 1 oz. copper traces.

3. Thermal response.

Device

Package

Shipping†

ORDERING INFORMATION

NSS12200LT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

MARKING DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER

SOT−23 (TO−236)

CASE 318

STYLE 6

3

2

1

http://onsemi.com

−12 VOLTS

4.0 AMPS

PNP LOW VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 65 mW

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1

VE M G

G

VE = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

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