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MUN5111T1G Datasheet(PDF) 1 Page - ON Semiconductor

Part No. MUN5111T1G
Description  Bias Resistor Transistors
Download  13 Pages
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MUN5111T1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 10
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel − Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
°C/W
Thermal Resistance, Junction-to-Ambient
RqJA
618 (Note 1)
403 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead
RqJL
280 (Note 1)
332 (Note 2)
°C/W
Junction and Storage Temperature
Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
PNP SILICON
BIAS RESISTOR
TRANSISTORS
SC−70/SOT−323
CASE 419
STYLE 3
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
MARKING DIAGRAM
ORDERING INFORMATION
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
http://onsemi.com
6x = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
6x M G
G


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