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MJW3281A Datasheet(PDF) 5 Page - ON Semiconductor

Part No. MJW3281A
Description  Complementary NPN-PNP Silicon Power Bipolar Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJW3281A Datasheet(HTML) 5 Page - ON Semiconductor

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MJW3281A (NPN) MJW1302A (PNP)
http://onsemi.com
5
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR EMITTER (VOLTS)
Figure 14. Active Region Safe Operating Area
PNP MJW1302A
NPN MJW3281A
100
1.0
0.1
1000
10
1.0
100
10
VCE, COLLECTOR EMITTER (VOLTS)
100
1.0
0.1
1000
10
1.0
100
10
100 mSec
10 mSec
1 Sec
100 mSec
10 mSec
1 Sec
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 13 and 14 is based on TJ(pk) = 150°C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
Figure 15. MJW1302A Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. MJW3281A Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
10000
1000
100
100
10
1.0
0.1
10000
1000
100
100
10
1.0
0.1
TJ = 25°C
ftest = 1 MHz
Cib
Cob
TJ = 25°C
ftest = 1 MHz
Cib
Cob
PNP MJW1302A
NPN MJW3281A
TYPICAL CHARACTERISTICS


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